PART |
Description |
Maker |
CYNB25-400 CYNA25-400 CYNA25-1000 |
SCR 25A 400V NON-ISOLAT TO-220AB 25 A, 400 V, SCR, TO-220AB SCR 25A 400V ISOLATED TO-220AB 25 A, 400 V, SCR, TO-220AB SCR 1000V 25A ISOLATED TO220AB 25 A, 1000 V, SCR, TO-220AB
|
Crydom, Inc. CRYDOM CORP
|
APT10035JFLL |
POWER MOS 7 1000V 25A 0.350 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
APT6025BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 600V 25A 0.250 Ohm
|
Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
|
APT10057WVR |
POWER MOS V 1000V 17.3A 0.570 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT10050LVR 10050LVR |
POWER MOS V 1000V 21A 0.500 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT10078BLL APT10078SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 POWER MOS 7 1000V 14A 0.780 Ohm
|
Advanced Power Technology, Ltd. Advanced Power Technology Ltd.
|
MIP0221SY MIP0222SY MIP0223SY MIP0224SY MIP0225SY |
Silicon MOS IC ISOLATOR, INT'LOCK 25A 3 POLEISOLATOR, INT'LOCK 25A 3 POLE; Poles, No. of:3; Current rating:25A; Approval Bodies:UL, CSA; IP rating:IP55; Power, switching AC3 max:13kW
|
PANASONIC[Panasonic Semiconductor] PANASONIC CORP
|
APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS V 1000V 21A 0.500 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400; POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP ADPOW[Advanced Power Technology]
|
25FR120 25FR120M A25FR120 A25FR120M 25FR100 25FR10 |
100V 25A Std. Recovery Diode in a DO-203AA (DO-4)package From old datasheet system 800V 25A Std. Recovery Diode in a DO-203AA (DO-4)package STANDARDRECOVERYDIODES 400V 25A Std. Recovery Diode in a DO-203AA (DO-4)package 600V 25A Std. Recovery Diode in a DO-203AA (DO-4)package 1000V 25A Std. Recovery Diode in a DO-203AA (DO-4)package 1200V 25A Std. Recovery Diode in a DO-203AA (DO-4)package 标准恢复二极 STANDARD RECOVERY DIODES
|
IRF[International Rectifier] InternationalRectifier
|
RJK0854DPB-00-J5 |
80V, 25A, 13 m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|